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Acoustoelectric Amplification in the Presence of Non‐Uniform Electric Field and Carrier Concentration in Solids
Author(s) -
Misra K. D.,
Pandey M. K.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221720216
Subject(s) - piezoelectricity , electric field , semiconductor , materials science , piezoelectric coefficient , strain (injury) , condensed matter physics , carrier lifetime , optoelectronics , composite material , physics , silicon , medicine , quantum mechanics
Acoustoelectric amplification in a strain‐dependent, transversely magnetised semiconductor is studied in the presence of non‐uniform electric field and carrier concentration along the sample length. A generalised expression for the amplification coefficient in strain‐dependent and piezoelectric materials is also discussed for a single carrier semiconductor. Application to a multilayered system of different single carrier semiconductors coupled to one elastic wave is also suggested. The non‐uniformity in carrier concentration is found to have significant effect on the amplification coefficient in a multilayer system.