Premium
Structure Sensitive Electronic Properties of Quasi‐Two‐Dimensional η‐Mo 4 O 11 Crystals
Author(s) -
Ôhara S.,
Negishi H.,
Inoue M.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221720136
Subject(s) - hall effect , electrical resistivity and conductivity , magnetoresistance , condensed matter physics , materials science , fermi level , electron , atmospheric temperature range , density of states , conduction band , magnetic field , physics , thermodynamics , quantum mechanics
The electrical resistivity, Hall effect, and magnetoresistance are measured over the temperature range from 1.5 to 300 K for a number of η‐Mo 4 O 11 crystals, that undergo two charge density wave transitions at T c1 = 105 K and T c2 = 35 K, prepared by a chemical vapor transport method using TeCl 4 (10 and 2 mg/cm 3 ) as a carrier gas. Good samples grown with 10 mg/cm 3 TeCl 4 have high carrier mobilities, showing quantum oscillations in the magnetoresistance and Hall coefficient at low temperatures. Poor samples grown with 2 mg/cm 3 TeCl 4 have rather low mobilities and anomalous temperature dependence of resistivity with a negative coefficient, together with a log T ‐dependence. These behaviors may be due to microscopic structural imperfections, such as excess oxygen or vacancies. Based on these experimental results, a tentative band model for conduction electrons and holes, as well as some localized states lying near the Fermi energy, is proposed.