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Pairing between Fast Diffusing Donors and Shallow Acceptors in p‐CdTe
Author(s) -
Zoth G.,
Ridel F. G.,
Schröter W.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221720118
Subject(s) - dissociation (chemistry) , cadmium telluride photovoltaics , enthalpy , schottky diode , chemistry , pairing , copper , acceptor , kinetics , annealing (glass) , chemical physics , analytical chemistry (journal) , crystallography , materials science , thermodynamics , nanotechnology , condensed matter physics , optoelectronics , metallurgy , physics , diode , superconductivity , organic chemistry , quantum mechanics , chromatography
Defect reactions of mobile intersitial donors D i with immobile substitutional acceptors A cd in the spacecharge region of Schottky contacts on p‐type CdTe are observed at about room temperature. The results are discussed in terms of formation and dissociation of defect complexes (A cd D i ). For copper diffused samples the dissociation kinetics of a complex, presumably (Cu Cd Cu i ), is determined. The dissociation enthalpy of 0.74 eV leads to the rather low value of 0.2 to 0.3 eV for the migration enthalpy of Cu i . Furthermore it is shown that thermally stimulated capacitance (TSCap) yields a step with a shape characteristic of defect complex dissociation and drift of the intersitial donor.