Pairing between Fast Diffusing Donors and Shallow Acceptors in p‐CdTe | Zendy

Zoth G. | Zendy; Ridel F. G. | Zendy; Schröter W. | Zendy

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Pairing between Fast Diffusing Donors and Shallow Acceptors in p‐CdTe

Author(s) -

Zoth G.,

Ridel F. G.,

Schröter W.

Publication year - 1992

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221720118

Subject(s) - dissociation (chemistry) , cadmium telluride photovoltaics , enthalpy , schottky diode , chemistry , pairing , copper , acceptor , kinetics , annealing (glass) , chemical physics , analytical chemistry (journal) , crystallography , materials science , thermodynamics , nanotechnology , condensed matter physics , optoelectronics , metallurgy , physics , diode , superconductivity , organic chemistry , quantum mechanics , chromatography

Defect reactions of mobile intersitial donors D i with immobile substitutional acceptors A cd in the spacecharge region of Schottky contacts on p‐type CdTe are observed at about room temperature. The results are discussed in terms of formation and dissociation of defect complexes (A cd D i ). For copper diffused samples the dissociation kinetics of a complex, presumably (Cu Cd Cu i ), is determined. The dissociation enthalpy of 0.74 eV leads to the rather low value of 0.2 to 0.3 eV for the migration enthalpy of Cu i . Furthermore it is shown that thermally stimulated capacitance (TSCap) yields a step with a shape characteristic of defect complex dissociation and drift of the intersitial donor.

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