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A Classification of the Dislocation‐Related Photoluminescencence in Silicon
Author(s) -
Lelikov Yu. S.,
Rebane Yu. T.,
Ruvimov S.,
Sitnikova A. A.,
Tarhin D. V.,
Shreter Yu. G.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221720107
Subject(s) - dislocation , photoluminescence , impurity , silicon , passivation , materials science , condensed matter physics , crystal (programming language) , enhanced data rates for gsm evolution , symmetry (geometry) , spectral line , crystallography , optoelectronics , physics , geometry , chemistry , layer (electronics) , nanotechnology , computer science , mathematics , artificial intelligence , quantum mechanics , programming language
The photoluminescence (PL) spectra of the basic extended defects in Si are obtained. A new classification of the PL lines is proposed according to the squared edge components of the Burger's vectors of the dislocations which surround the structural defects. The different manifold splitting of the various dislocation‐related PL lines are predicted for external perturbations violating the crystal symmetry. The possibility of the passivation of these dislocation cores by transition metal impurities is also discussed.