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Chemical Bond Approach to the Dielectric Constant of Semiconductors
Author(s) -
Esperidião A. S. C.,
Brum J. A.,
Ramos J. G.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221710212
Subject(s) - semiconductor , dielectric , group (periodic table) , tetrahedron , extension (predicate logic) , chemical bond , chemistry , materials science , computational chemistry , condensed matter physics , crystallography , thermodynamics , physics , optoelectronics , organic chemistry , computer science , programming language
The extension of the Nucho, Ramos, and Wolff method for the non‐tetrahedral semiconductors was made by Brum and Ramos. This extended NRW method is applied to the elemental, group III‐V, and group II‐VI semiconductors and better accuracy is claimed. The ionicity for the II‐VI semiconductors (zinc‐blende structure) is also calculated and confirms the ionicity scale established by Phillips. Again, Coulson's definition is reconciled with that of Phillips.