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The Conductivity Anisotropy in Uniaxially Stressed p‐InSb
Author(s) -
Germanenko A. V.,
Minkov G. M.,
Rut O. E.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221710117
Subject(s) - condensed matter physics , anisotropy , conductivity , materials science , semiconductor , degenerate energy levels , degenerate semiconductor , doping , acceptor , valence band , stress (linguistics) , band gap , atmospheric temperature range , dielectric , chemistry , thermodynamics , physics , optics , optoelectronics , linguistics , philosophy , quantum mechanics
The conductivity anisotropy induced by uniaxial stress in p‐InSb with acceptor concentration N A ≈ (10 14 to 2 × 10 16 ) cm −3 is investigated in the temperature range T = 2 to 70 K under uniaxial stress up to 6 × 10 8 Pa. In pure materials pressure and temperature dependences of the conductivity anisotropy are explained by ordinary models in the hopping regime and regime of free hole conductivity. In doped semiconductors these dependences cannot be explained without taking into account the peculiarities of the metal‐dielectric transition induced by uniaxial stress in p‐type narrow‐gap semiconductors with degenerate valence band ⌜ 8 .