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Growth and Optical Characterization of CrSi 2 Thin Films
Author(s) -
Lange H.,
Giehler M.,
Henrion W.,
Fenske F.,
Sieber I.,
Oertel G.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221710108
Subject(s) - phonon , materials science , raman spectroscopy , thin film , reflectivity , absorption edge , density of states , spectral line , sputter deposition , oscillator strength , absorption spectroscopy , annealing (glass) , condensed matter physics , lattice (music) , atomic physics , sputtering , molecular physics , band gap , optics , optoelectronics , chemistry , physics , nanotechnology , astronomy , composite material , acoustics
CrSi 2 thin films are grown by dc magnetron sputtering of Cr single layers on Si and Cr/Si multi‐layer configurations on SiO 2 and subsequent external annealing. In the optical spectra around the band edge the phonon emission and the absorption branches of the indirect transition at 0.5 eV and the direct transition around 1 eV can be discerned. Spectral features in the reflectivity spectrum at higher energies are discussed on the basis of published density of states calculations. The reflectivity spectrum in the IR region exhibits pronounced structures which can be fitted by a six‐oscillator model yielding the TO frequencies, oscillator strengths, and damping constants of the lattice modes. The Raman spectrum shows bands in the 310 to 410 cm −1 wave number region.