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LO‐Phonon Generation with Energy Collision Broadening in Polar Semiconductors
Author(s) -
Král K.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700219
Subject(s) - phonon , non equilibrium thermodynamics , polar , semiconductor , physics , distribution function , generalization , collision , hot electron , electron , atomic physics , condensed matter physics , quantum mechanics , mathematics , mathematical analysis , computer security , computer science
The generation of LO‐phonons in the process of the hot electron cooling in polar semiconductors is studied theoretically. The generation rate formula is derived in the frame of the theory of the nonequilibrium statistical operator. The electron energy collision broadening is included in an approximation which meets the requirements of the elementary thermodynamics. Numerical results giving the generation rate and quasi‐steady state LO‐phonon distribution function in some materials are presented. The generalization of the generation rate formula to the case of the nonthermalized electronic system is also given.