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Phonon‐Limited Electron Mobility in a Polar Semiconductor Quantum Well
Author(s) -
León H.,
León F.,
Comas F.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700211
Subject(s) - hamiltonian (control theory) , phonon , degenerate energy levels , condensed matter physics , electron , semiconductor , quantum well , polar , electron mobility , degenerate semiconductor , quantum limit , physics , quantum , piezoelectricity , fermi gas , dielectric , quantum mechanics , mathematics , mathematical optimization , laser , acoustics
Low‐field drift mobility for transport parallel to the interfaces in a polar semiconductor quantum well is calculated following an iterative procedure. Calculations are carried out in the size‐quantum‐limit approximation for a degenerate electron gas. Screening of the electron–phonon interaction via acoustic deformation potential, piezoelectric of the accoustic branch, and longitudinal optical mode couplings is taken into account by means of a dielectric function deduced in an earlier work. Confinement of LO vibrations is also taken into account by means of an appropriate Hamiltonian successfully employed in previous works. The role of the electron–LO‐phonon interaction is accurately established and the conclusion is drawn that this coupling becomes considerable at intermediate and very important at sufficiently high temperatures for quantum wells of the GaAs/AlGaAs type. Comparison with experiment gives an acceptable agreement between calculated and measured mobility values.