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TEM and DLTS Investigations of the Electrical Activity of Σ17 and Σ41 Grain Boundaries in Germanium
Author(s) -
Wang N.,
Haasen P.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700205
Subject(s) - germanium , materials science , grain boundary , engineering physics , optoelectronics , metallurgy , physics , silicon , microstructure
The electronic defect states of near Σ17 and Σ41 tilt grain boundaries (GBs) in germanium are determined by means of deep‐level‐transient spectroscopy (DLTS). The results indicate energy levels E c − 0.56 ± 0.02 eV and E c − 0.38 ± 0.02 eV for the Σ17 and Σ41 GBs, respectively. The structure of these GBs is further studied by transmission electron microscopy (TEM). Because of a small twist component of the misorientation in the Σ17 bicrystal, GB dislocations have jogs. These jogs may create dangling bonds which are considered to be at the origin of the electrical activity of the Σ17 GB. No structural feature has been found which may create jogs or dangling bonds in the small angle Σ41 GB.