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Polarization Dependences of Two‐Photon Absorption in Narrow‐Gap InSb and HgCdTe Type Semiconductors
Author(s) -
Ismailov T. G.,
Bagirov M. A.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700138
Subject(s) - semiconductor , polarization (electrochemistry) , photon , attenuation coefficient , two photon absorption , band gap , absorption (acoustics) , radiation , optics , atomic physics , physics , materials science , optoelectronics , condensed matter physics , chemistry , laser
Two‐photon absorption of light in narrow‐gap semiconductors of InSb and HgCdTe type is considered in the framework of the two‐band Kane model. The analytical expressions for the TPA coefficient in dependence on the energies of pumped radiation and band gap of semiconductor is obtained. All the possible nonequivalent geometries of experiment are considered. In the calculations the excitonic effects are neglected. The polarization dependences are discussed and the comparison with experiment is carried out.