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On the Scattering Rates of Free Electrons in High Purity Semiconductors at Low Lattice Temperatures
Author(s) -
Ghorai A. K.,
Bhattacharya D. P.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700127
Subject(s) - condensed matter physics , scattering , anisotropy , electron , semiconductor , phonon , lattice (music) , effective mass (spring–mass system) , phonon scattering , electron scattering , materials science , physics , optics , nuclear physics , quantum mechanics , optoelectronics , acoustics
At low lattice temperatures when the phonon energy cannot be neglected in comparison to the electron energy the influence of the mass anisotropy on the scattering rates becomes pronounced. Numerical calculations are performed for Ge and Si for electron interactions with acoustic phonons.

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