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The Warm‐Electron Distribution Function in the Energy Noncollision Plasma in Submicron Semiconductor Layers
Author(s) -
Gurevich Yu. G.,
Logvinov G. N.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700125
Subject(s) - electron , semiconductor , kinetic energy , condensed matter physics , relaxation (psychology) , distribution function , plasma , atomic physics , physics , materials science , quantum mechanics , psychology , social psychology
The warm‐electron distribution function is obtained from the kinetic equation in semiconductor submicron layers under the assumption that the surface energy relaxation is considerably higher than the bulk energy relaxation rate and the frequency of the electron–electron interactions as well. A divergence in the point ϵ = 0 is shown (where ϵ is the electron energy) if the surface scatterers are acoustic phonons. The reason of this anomaly is that small energy electrons have infinitly high partial electric conductivity while their energy relaxation rate turns to zero. In order to obtain the correct results it is necessary to take into account the e–e interaction between small and high energy electrons. This interaction leads to energy pumping from one carrier group to another and then to the external thermostats.