Premium
Characterization of GaSb Epitaxial Layers on GaSb and GaAs Substrates by Infrared Reflectivity
Author(s) -
Mezerreg A.,
Llinares C.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700115
Subject(s) - epitaxy , materials science , reflectivity , infrared , substrate (aquarium) , layer (electronics) , optoelectronics , free carrier , characterization (materials science) , optics , nanotechnology , physics , geology , oceanography
Infrared reflectivity measurements on p‐GaSb epitaxial layers on n‐GaSb substrate and n‐GaSb epitaxial layers on semi‐insulating (SI) GaAs are made to determine the mobility and density of free carriers in the bulk and the layer simultaneously by fitting a theoretical model to experimental data. The results obtained are generally in good agreement with those given by Hall measurements.