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Optical and Structural Properties of Amorphous Silicon Obtained by Low Pressure Chemical Vapour Deposition
Author(s) -
Amato G.,
Fizzotti F.,
Manfredotti C.,
Menna P.,
Nobile G.,
Spagnolo R.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700114
Subject(s) - disilane , chemical vapor deposition , amorphous silicon , amorphous solid , raman spectroscopy , materials science , silicon , molecular vibration , analytical chemistry (journal) , hydrogen , molecular physics , chemistry , crystalline silicon , optics , crystallography , optoelectronics , organic chemistry , physics
Optoelectronic and structural properties of thin, hydrogenated amorphous silicon samples grown by thermal decomposition of disilane in different positions along a low pressure chemical vapour deposition reactor are investigated by means of infrared spectroscopy, Raman scattering, and photothermal deflection spectroscopy. Correlations between the character and the hydrogen content versus density of states and between the hydrogen bonding configuration versus transverse optical/acoustic phonon modes are found. The purely thermal excitation of gas molecules gives rise to an amorphous material with a rather low density of states. Samples grown at different positions inside the reactor show different hydrogen concentration and bonding configuration, bond angle deviation, Urbach tail slope, and density of states. The most important parameters governing the LPCVD of a‐Si: H are discussed.