Premium
Microhardness of A N −1 B N + 1 C 2 8− N Chalcopyrite Semiconductors
Author(s) -
Kumar V.,
Prasad G. M.,
Chandra D.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221700108
Subject(s) - chalcopyrite , indentation hardness , semiconductor , semiconductor materials , materials science , atomic physics , crystallography , analytical chemistry (journal) , physics , chemistry , metallurgy , copper , quantum mechanics , microstructure , chromatography
Microhardness of A N −1 B N + 1 C 2 8− N ( N = 2, 3) tetrahedrally coordinated chalcopyrite semiconductors are calculated using plasma oscillation theory of solids. The calculated values are in fair agreement with the values reported by several workers and the experimental values.