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Tunneling in the Representation of Scattering States
Author(s) -
Valeev V. G.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221690220
Subject(s) - scattering , quantum tunnelling , hamiltonian (control theory) , electron , physics , electron scattering , condensed matter physics , quantum mechanics , impurity , invariant (physics) , mathematics , mathematical optimization
A new gauge‐invariant many‐electron approach is given to the problem of tunneling in condensed systems, based on a Hamiltonian in the representation of scattering states for tunnel junctions with arbitrary strength of coupling. The kinetic equation for the electron density matrix is derived; collision integrals for the cases of electron‐electron, electron‐phonon, and electron‐impurity interactions are found. The noise properties of tunnel contacts of normal metals are analysed.