Tunneling in the Representation of Scattering States | Zendy

Valeev V. G. | Zendy

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Tunneling in the Representation of Scattering States

Author(s) -

Valeev V. G.

Publication year - 1992

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221690220

Subject(s) - scattering , quantum tunnelling , hamiltonian (control theory) , electron , physics , electron scattering , condensed matter physics , quantum mechanics , impurity , invariant (physics) , mathematics , mathematical optimization

A new gauge‐invariant many‐electron approach is given to the problem of tunneling in condensed systems, based on a Hamiltonian in the representation of scattering states for tunnel junctions with arbitrary strength of coupling. The kinetic equation for the electron density matrix is derived; collision integrals for the cases of electron‐electron, electron‐phonon, and electron‐impurity interactions are found. The noise properties of tunnel contacts of normal metals are analysed.

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