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Conduction Band Edge Charge Densities in Hg x Cd 1− x Te
Author(s) -
Aourag H.,
Khelifa B.,
Rezki M.,
Tadjer A.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221690212
Subject(s) - semimetal , conduction band , impurity , condensed matter physics , semiconductor , electronic band structure , quasi fermi level , materials science , thermal conduction , chemistry , atomic physics , band gap , physics , electron , optoelectronics , organic chemistry , composite material , quantum mechanics
On the basis of the charge densities at the conduction band edge X c the effect of interstitial impurities on the modification of the band structure of the system Hg x Cd 1− x Te is explained. The inversion of the symmetry state at X c in relation to x bears information on the semimetal‐semiconductor transition.