Conduction Band Edge Charge Densities in Hg  x  Cd 1− x  Te | Zendy

Aourag H. | Zendy; Khelifa B. | Zendy; Rezki M. | Zendy; Tadjer A. | Zendy

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Conduction Band Edge Charge Densities in Hg x Cd 1− x Te

Author(s) -

Aourag H.,

Khelifa B.,

Rezki M.,

Tadjer A.

Publication year - 1992

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221690212

Subject(s) - semimetal , conduction band , impurity , condensed matter physics , semiconductor , electronic band structure , quasi fermi level , materials science , thermal conduction , chemistry , atomic physics , band gap , physics , electron , optoelectronics , organic chemistry , composite material , quantum mechanics

On the basis of the charge densities at the conduction band edge X c the effect of interstitial impurities on the modification of the band structure of the system Hg x Cd 1− x Te is explained. The inversion of the symmetry state at X c in relation to x bears information on the semimetal‐semiconductor transition.

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