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Magnetoplasma Reflection of Heavily Doped Silicon
Author(s) -
Dildey F.,
Kessler F. R.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221690117
Subject(s) - doping , spectral line , silicon , effective mass (spring–mass system) , reflection (computer programming) , drude model , excitation , plasma , electron , atomic physics , dielectric , rotation (mathematics) , materials science , chemistry , analytical chemistry (journal) , optics , physics , condensed matter physics , optoelectronics , chromatography , quantum mechanics , astronomy , computer science , programming language , geometry , mathematics
Magnetoplasma reflection spectra of heavily doped silicon in terms of Kerr ellipticity and rotation are presented in the infrared wavelength range from 4 to 25 μm. For carrier concentrations from 3 × 10 19 to 10 20 cm −3 , peak rotation angles of about 0.7° and 2° for p‐type and n‐type samples, respectively, were measured in static magnetic fields with inductions up to 15 T by a double modulation technic. In order separate the atomic parameters (carrier concentration N , effective mass m *, and collision time τ) without any additional measurements, the spectra of plasma reflection, ellipiticity, and rotation are analysed by different theoretical models. It is shown that the simple Drude model does not fit the lineshape of the measured spectra consistently. Near the plasma resonance an additional contribution to the dielectric function was found, which is attributed to the influence of plasmon excitation. The effect is more prononced in p‐type samples and has to be taken into account when determining the effective hole mass. For electrons, m * = (0.29 + 0.015) m E was derived from the spectra, whereas for p‐type samples an increasing hole mass with higher doping levels was determined.