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Optical Determination of Carrier Concentration and Mobility in p and n Bulk GaSb by Infrared Reflectivity Spectral Analysis
Author(s) -
Mezerreg A.,
Llinares C.,
Montaner A.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221690115
Subject(s) - electron mobility , infrared , range (aeronautics) , reflectivity , materials science , conductivity , charge carrier density , electron , scattering , hall effect , electron density , spectrometer , analytical chemistry (journal) , optics , chemistry , optoelectronics , electrical resistivity and conductivity , physics , doping , quantum mechanics , chromatography , composite material
Abstract Infrared reflectivity measurements are made on both, n and p bulk GaSb at 300 K to determine carrier concentration and mobility of the material by using a least‐square fit on a non‐linear model to experimental data after their transfer from spectrometer to a compatible computer in ASCII code. For n‐type GaSb a method is proposed for calculating density and mobility of carriers from plasma frequency and carrier scattering time given by the fit, taking into account contributions of both, Γ and L band electrons to conductivity. Good agreement is obtained between density and mobility given by reflectivity and those given by Hall measurements for density range 1.2 × 10 17 to 3 × 10 18 cm −3 .