Optical Determination of Carrier Concentration and Mobility in p and n Bulk GaSb by Infrared Reflectivity Spectral Analysis | Zendy

Mezerreg A. | Zendy; Llinares C. | Zendy; Montaner A. | Zendy

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Optical Determination of Carrier Concentration and Mobility in p and n Bulk GaSb by Infrared Reflectivity Spectral Analysis

Author(s) -

Mezerreg A.,

Llinares C.,

Montaner A.

Publication year - 1992

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221690115

Subject(s) - electron mobility , infrared , range (aeronautics) , reflectivity , materials science , conductivity , charge carrier density , electron , scattering , hall effect , electron density , spectrometer , analytical chemistry (journal) , optics , chemistry , optoelectronics , electrical resistivity and conductivity , physics , doping , quantum mechanics , chromatography , composite material

Infrared reflectivity measurements are made on both, n and p bulk GaSb at 300 K to determine carrier concentration and mobility of the material by using a least‐square fit on a non‐linear model to experimental data after their transfer from spectrometer to a compatible computer in ASCII code. For n‐type GaSb a method is proposed for calculating density and mobility of carriers from plasma frequency and carrier scattering time given by the fit, taking into account contributions of both, Γ and L band electrons to conductivity. Good agreement is obtained between density and mobility given by reflectivity and those given by Hall measurements for density range 1.2 × 10 17 to 3 × 10 18 cm −3 .

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