z-logo
Premium
Switching of Impurity Breakdown in n‐type GaAs by FIR or Near Edge Illumination
Author(s) -
Karel F.,
Koláček J.,
Oswald J.,
Pastrñák J.,
Petříček O.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221670149
Subject(s) - impurity , enhanced data rates for gsm evolution , materials science , optoelectronics , physics , computer science , telecommunications , quantum mechanics

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom