Premium
Galvanomagnetic Luminescence Spectra of InSb
Author(s) -
Kessler F. R.,
Paul R.,
Nies R.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221670136
Subject(s) - condensed matter physics , magnetic field , spectral line , electron , luminescence , wavelength , landau quantization , saturation (graph theory) , effective mass (spring–mass system) , conduction band , chemistry , radiation , atomic physics , diffusion , free electron model , physics , optics , mathematics , quantum mechanics , astronomy , combinatorics , thermodynamics
In crossed electric and magnetic fields inside an intrinsic semiconductor a free carrier compression takes place due to the Lorentz force (LF). This leads to a free carrier profile containing regions of enhancement as well as of depletion of free electron–hole pairs. These deviations from the equilibrium concentration lead to a “galvanomagnetic luminescence (GL)” which is positive or negative in relation to the equilibrium temperature radiation. The measured GL spectra of InSb show a double peak at about 5.6 μm wavelength due to g ‐factor splitting of the Landau level involved. The evaluation of the GL spectra (as function of magnetic field up to 14 T) by means of model calculations leads to the determination of the energy dependent band parameters: effective mass and Landé factor corresponding to the strong nonparabolicity of the conduction band of InSb. The integral radiation output of GL is also measured as function of the LF showing an increase of the quantum efficiency of emission of radiation due to (i) a saturation effect of the surface recombination velocity and (ii) a reduced diffusion length at increasing magnetic field leading to a corresponding profile enhancement.