Premium
Optical Excitation of DX Centers in GaAlAs Alloys Doped with Si and Te
Author(s) -
Seguy P.,
Yu P. Y.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221670120
Subject(s) - metastability , spectral line , doping , deep level transient spectroscopy , materials science , optical spectra , capacitance , excitation , chemistry , atomic physics , optoelectronics , silicon , physics , electrode , organic chemistry , quantum mechanics , astronomy
The effect of light illumination on the deep level transient spectroscopy (DLTS) and constant temperature capacitance transient spectra of DX centers in GaAlAs alloys doped with Si and Te is studied. The experimental DLTS spectra are compared with theoretical spectra based on a model in which the only effect of light is to photoionize the DX centers. The calculated spectra reproduce satisfactorily the experimental spectra only in the Te doped samples. In Si doped samples the calculated spectra cannot reproduce the light‐induced peak reported recently by Jia et al. Thus the results confirm that this peak may be associated with a light‐induced shallow metastable center related to Si in GaAlAs. The identification of this shallow metastable state based on the present work and other recent experimental and theoretical investigations is discussed.