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Photochemical Reorganization of Deep Impurity Centres in Silicon. Dissociation of Donor–Acceptor Pairs
Author(s) -
Adilov K. A.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221670118
Subject(s) - impurity , dissociation (chemistry) , silicon , acceptor , photochemistry , zinc , chemistry , fluorescence , doping , selenium , chromium , materials science , optoelectronics , optics , physics , organic chemistry , condensed matter physics
Reversible processes are observed of photochemical reorganization of deep centres in p‐type silicon doped with zinc, selenium, and chromium under the illumination of light in the impurity absorption region. The dissociation is found of donor–acceptor pairs (Zn + i B − s , (Se + i B − s )°, and (Cr + i B − s )° followed by isolated centres of Zn + i and Se + s .