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Magnetophonon Resonance on Three Types of Carriers in p‐InSb
Author(s) -
Ugrin Yu. O.,
Sheregii E. M.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221660127
Subject(s) - valence band , electron , condensed matter physics , phonon , series (stratigraphy) , physics , transverse plane , distortion (music) , atomic physics , materials science , optoelectronics , nuclear physics , paleontology , amplifier , structural engineering , cmos , engineering , biology
For the first time in a single experiment the magnetophonon resonances of three types of carriers in p‐InSb are investigated: light holes (MPR 1 ), heavy holes (MPR h ), and electrons (MPR e ). From the temperature shift of the ground series (most intensive ones) of MPR 1 and MPR h the valence‐band parameters of the band structure as function of temperature are calculated. The investigation completed allows for the first time to identify nonearlier observed two‐phonon transitions in p‐InSb, alongside with an additional series of peculiarities: a satellite of the main MPR h series peaks at weak magnetic fields. The comparison of MPR h of two samples with different mobilities of heavy holes lead to the observance of a distortion in the period of the transverse field of the main MPR h series in the sample of less mobility of heavy holes.