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Alloy Broadening of Semiconductor Impurity Lines Second‐Neighbor Effects
Author(s) -
Ochi Carmen Lucia C.,
Koiller Belita
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221660116
Subject(s) - impurity , condensed matter physics , hamiltonian (control theory) , cluster (spacecraft) , lattice (music) , alloy , semiconductor , ternary operation , k nearest neighbors algorithm , bethe lattice , doping , magnetic impurity , materials science , atomic physics , physics , quantum mechanics , mathematics , mathematical optimization , optoelectronics , artificial intelligence , computer science , acoustics , ising model , composite material , programming language
The alloy broadening of impurity lines in ternary semiconductor alloys is investigated using a tight‐binding Hamiltonian with nearest‐neighbor interactions and the cluster ‐ Bethe‐lattice approach. A 17‐sites cluster connected to the alloy Bethe‐lattice effective medium within a one‐orbital per site diagonal disorder model is used for the study of a single impurity and of impurity pairs. The method is applied to In x Ga 1‐x P doped with Ge, and it is found that broadening occurs for the impurity on the same sublattice as the group‐III species, i.e., second neighbor to the occupationally disordered sites. This result is interpreted in terms of the cluster statistics and of the spacial distribution of the wavefunctions associated to the localized impurity states.