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Recombination Radiation of a Semiconductor in the Field of a Strong Electromagnetic Wave and a Quantizing Magnetic Field
Author(s) -
Frolov V. V.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221650123
Subject(s) - physics , electromagnetic radiation , magnetic field , photon , electromagnetic field , semiconductor , condensed matter physics , electron , atomic physics , optics , optoelectronics , quantum mechanics
Abstract The parametric transformation is considered of intense electromagnetic radiation inducing the resonance‐quantum transitions of electrons in a semiconductor between the valence band edge and the conduction band edge in the presence of a magnetic field. The dependence of the power density of the radiative recombination of a semiconductor on the frequency of radiated photons and temperature is studied. It is shown that the frequency dependence may have resonance peculiarities and the position of the resonance peculiarities depends on the intensity of the exciting electromagnetic field and the magnetic field strength.