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EPR of new platinum‐related complexes in silicon. I. Defects of symmetry C 1h formed at intermediate temperatures
Author(s) -
Höhne M.,
Gehlhoff W.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221640219
Subject(s) - electron paramagnetic resonance , silicon , symmetry (geometry) , annealing (glass) , monoclinic crystal system , crystallography , platinum , materials science , ion , chemistry , condensed matter physics , molecular physics , nuclear magnetic resonance , physics , geometry , crystal structure , mathematics , metallurgy , catalysis , organic chemistry , biochemistry
The variety of Pt‐related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic peculiarity: Though the angular dependences evidence an apparent monoclinic symmetry, two of the line groups, typical for this symmetry, coincide for any angle of rotation. The condition for this behaviour is discussed.