Premium
Defect surface layer effects on the Raman intensity for collective excitations of a semi‐infinite layered electron gas system
Author(s) -
Yang J.,
Lu X. J.,
Horing N. J. M.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221640212
Subject(s) - raman spectroscopy , intensity (physics) , layer (electronics) , electron , electron density , molecular physics , materials science , transfer matrix method (optics) , plasmon , atomic physics , physics , optics , nanotechnology , quantum mechanics , optoelectronics
The transfer matrix method is applied to the determination of the Raman intensity for a semi‐infinitelayered electron gas system with a defect layer at the surface. In this, the surface layer has a different electron sheet density from that of the other layers, which is the case for realistic systems. The numerical results show that the Raman intensity at the surface plasmon energy is weakend by the presence of the defect layer under the conditions of the calculation. An analytic expression for the Raman intensity of a semi‐infinite layered electron gas having a finite number of defect layers is also presented.