Premium
Effect of Pressure on the Charge Density Wave Transitions in η‐Mo 4 O 11 Crystal
Author(s) -
Ôhara S.,
Koyano M.,
Negishi H.,
Sasaki M.,
Inoue M.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221640126
Subject(s) - condensed matter physics , charge density wave , hydrostatic pressure , electrical resistivity and conductivity , magnetoresistance , monoclinic crystal system , hall effect , crystal (programming language) , fermi level , single crystal , electron , physics , materials science , chemistry , magnetic field , crystal structure , thermodynamics , nuclear magnetic resonance , superconductivity , crystallography , quantum mechanics , computer science , programming language
Electrical resistivity ϱ versus temperature T over 4.2 to 300 K under hydrostatic pressures up to 1.2 GPa, transverse magnetoresistance, and Hall effect at 4.2 K and constant pressure are measured for a quasi‐two‐dimensional crystal of monoclinic η‐Mo 4 O 11 . Semiempirical analysis of the ϱ− T curves below the charge density wave (CDW) transition temperatures T c1 and T c2 shows that the temperature dependences of the CDW gap energies δ 1 (T) and δ 2 ( T ) follow a single universal curve, independent of applied pressures. The Shubnikov‐de Haas oscillations are also observed in these transport quantities, from which the effect of pressure on the nature of Fermi surfaces of holes and/or electrons associated with the CDW transitions is discussed qualitatively.