Magnetic Field Dependence of Hydrogen Energy Levels in GaAsGa 1− x  Al  x  As Quantum‐Well Structure | Zendy

Shen ZhongJun | Zendy; Zhong ShuAu | Zendy; Gu ShiHei | Zendy

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Magnetic Field Dependence of Hydrogen Energy Levels in GaAsGa 1− x Al x As Quantum‐Well Structure

Author(s) -

Shen ZhongJun,

Zhong ShuAu,

Gu ShiHei

Publication year - 1991

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221640123

Subject(s) - quantum well , ground state , magnetic field , condensed matter physics , binding energy , field (mathematics) , quantum , physics , energy level splitting , hydrogen , variational method , quantum number , atomic physics , quantum mechanics , mathematics , laser , pure mathematics

A calculation is made of the binding energies of the hydrogenic donor ground state in a GaAsGa 1− x Al x As quantum well of finite barrier height in the presence of a magnetic field, which is taken to be parallel to the growth axis of the quantum‐well structure. Strong‐pertubation theory and pertubative‐variational approach are used. The results are given as a function of the size of the quantum well.

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