Excitons Bound to Defect Complexes in Heavily Doped CdS | Zendy

Georgobiani A. N. | Zendy; Gruzintsev A. N. | Zendy; Zayats A. V. | Zendy

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Excitons Bound to Defect Complexes in Heavily Doped CdS

Author(s) -

Georgobiani A. N.,

Gruzintsev A. N.,

Zayats A. V.

Publication year - 1991

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221640121

Subject(s) - exciton , doping , luminescence , alkali metal , acceptor , lithium (medication) , biexciton , recombination , materials science , range (aeronautics) , chemistry , atomic physics , molecular physics , crystallography , condensed matter physics , optoelectronics , physics , medicine , organic chemistry , endocrinology , composite material , biochemistry , gene

The fine structure of the luminescence due to bound excitons is found in CdS crystals doped with alkali metals (AM): lithium or sodium 10 18 to 10 20 cm −3 . In the spectral range of the acceptor–exciton complex emission the optical transitions are explained as recombination of excitons bound to the complexes of nearby‐located defects [AM cd Cd i ] or [AM cd AM i ] with different distances between components: 0.2 to 0.6 nm. The Haynes rule yields E ex / E compl = 0.14 for such excitons.

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