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On the Theory of Coupled Phonon—Plasmon Polariton Excitation on the Surface of Polar Semiconductors
Author(s) -
Arakelian V. H.,
Hovsepian N. M.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221640115
Subject(s) - polariton , excitation , surface plasmon polariton , semiconductor , plasmon , phonon , polar , surface phonon , excited state , surface plasmon , condensed matter physics , materials science , atomic physics , physics , optoelectronics , quantum mechanics
The problem of polariton formation on the surface of polar semiconductors is considered. Polaritons are excited by charged particles crossing the interface between vacuum and polar semiconductor. The part of particle energy expended on excitation of coupled phonon‐plasmon polaritons on the interface is calculated. Excitation frequency zones and intensities are found, as well as the loss‐energy dependence on the phase velocity of surface polaritons.