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A Weakly‐Bonded Polaron in Semiconductors with a Degenerate Valence Band Edge
Author(s) -
Gifeisman Sh. N.,
Koropchanu V. P.,
Pasechnik O. F.
Publication year - 1991
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221630211
Subject(s) - polaron , excited state , degenerate energy levels , hamiltonian (control theory) , condensed matter physics , phonon , band gap , ground state , physics , valence (chemistry) , atomic physics , semiconductor , impurity , acceptor , binding energy , chemistry , quantum mechanics , electron , mathematical optimization , mathematics
A polaron is considered which is bonded on a shallow acceptor near a Γ 8 degenerate valence band edge. With the assumption that the polaron binding energy of the impurity centre is far smaller than the optical phonon limiting energy, an expression is obtained for the effective Hamiltonian of an impurity‐phonon system, and the ground and first excited state energy in a number of A II B VI and A III B V compounds is calculated A comparison with both, the experiment and results of other papers is also made. It is shown that, if degeneration of the valence band is taken into account, the energy gap between the ground and first excited states becomes considerably lower as compared to the simple hydrogen‐like model near a non‐degenerate band.