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Transient Thermoelectric Effect in Quasi‐Two‐Dimensional η‐Mo 4 O 11 Crystal
Author(s) -
Sasaki M.,
Tai G. X.,
Inoue M.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221620228
Subject(s) - thermoelectric effect , transient (computer programming) , condensed matter physics , materials science , electron , thermal conduction , relaxation (psychology) , atmospheric temperature range , charge carrier , fermi level , diffusion , charge density wave , crystal (programming language) , range (aeronautics) , conduction band , atomic physics , optoelectronics , physics , thermodynamics , composite material , psychology , social psychology , superconductivity , quantum mechanics , computer science , operating system , programming language
Dynamic measurements of thermal diffusion of conduction carriers in quasi‐two‐dimensional η‐Mo 4 O 11 crystals which undergo charge‐density‐wave transitions are made over the temperature range 12 to 300 K and time range 50 ns to 2 ms using a pulsed laser‐induced “transient thermoelectric effect (TTE)” technique. The light‐generated TTE voltage decays exponentially with multiple relaxation times τ i ( i = 1 to 5), from which the nature of the Fermi surfaces of both electrons and holes is discussed based on recent tight‐binding band calculations.