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Auger Recombination via Defects in Tellurium
Author(s) -
Mazur Yu. I.,
Rubo Yu. G.,
Snitko O. V.,
Strikha M. V.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221620225
Subject(s) - tellurium , auger effect , auger , atomic physics , recombination , electron , auger electron spectroscopy , chemistry , physics , nuclear physics , inorganic chemistry , biochemistry , gene
Auger process including a bound electron and two free holes proved to be the dominant recombination path in tellurium at low temperatures ( T < 50 K). The experimental value of the Auger constant is C = 1.6 × 10 −28 cm 6 s −1 . The theoretical model considering the tellurium band structure explains the experimental data qualitatively and gives an order of magnitude value for the lifetimes of excess carriers.