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Self‐Consistent Calculation of Density of States in Impure Semiconductors
Author(s) -
Grill R.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221620222
Subject(s) - semiconductor , formalism (music) , condensed matter physics , density of states , scattering , impurity , electronic band structure , physics , semimetal , quantum mechanics , band gap , art , musical , visual arts
Using the Kadanoff‐Baym Green's function formalism the density of states function is calculated. The calculation is performed for the heavy hole band and screened charged impurity scattering in the Born approximation. The results are shown for p‐HgCdTe semiconductor. It is argued that a qualitative change of the band near the edge is essential for a band occupation.