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X‐Ray Analysis of Structural Defects in a Semiconductor Superlattice
Author(s) -
Holý V.,
Kuběna J.,
Ploog K.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221620204
Subject(s) - superlattice , diffraction , x ray , x ray crystallography , condensed matter physics , materials science , lattice (music) , lattice constant , semiconductor , semiconductor materials , statistical model , statistical analysis , optics , crystallography , statistical physics , physics , chemistry , mathematics , optoelectronics , statistics , acoustics
The structural defects in a (GaAs) m /(AlAs) n superlattice are studied experimentally and theoretically as well. Three models for the defects are proposed, which follow from the SL growth kinetics. Direct expressions for the reflectivities are derived from the semikinematical approximation of X‐ray diffraction, assuming that the statistical parameters characterizing the defect models are distributed normally. On the basis of a numerical fit of the theoretical and experimental double crystal X‐ray rocking curves the mean lattice parameter and the mean chemical composition as well as their statistical dispersions are found for a [(GaAs) m /(AlAs) n ] 120 superlattice. The X‐ray diffraction curves enable one to find the most probable model for the actual structural defects in the real superlattice.