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Two‐Dimensional Character of Electron Gas in Layered InSe Crystals
Author(s) -
Dmitriev A. I.,
Kovalyuk Z. D.,
Lazorenko V. I.,
Lashkarev G. V.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221620118
Subject(s) - semiconductor , condensed matter physics , oscillation (cell signaling) , kinetic energy , magnetoresistance , superlattice , character (mathematics) , transversal (combinatorics) , electron , fermi gas , materials science , crystal (programming language) , quantum well , physics , chemistry , quantum mechanics , magnetic field , mathematical analysis , laser , biochemistry , geometry , mathematics , computer science , programming language , optoelectronics
An analysis of investigation results of kinetic, galvanomagnetic, and quantum oscillation properties in the range of 4.3 to 300 K permits to construct a phenomenological spatial energy model of the spectrum of the layered semiconductor InSe, pure and intercalated by metal atoms. The dynamics of the temperature variations of the character of kinetic phenomena is suggested. The model suggested serves to prove in experiment and to explain the two‐dimensional character of the current carrier gas in the range of low temperatures as well as the peculiarities of the temperature dependence of transversal and longitudinal specific resistance, magnetoresistance, oscillation, and resonance phenomena in the range of 4.3 to 300 K. An analogy is drawn between the band structure of a single crystal of the layered semiconductors InSe and semiconductor superlattices.