Premium
Temperature Dependent Field Ionization of Phosphorus Atoms in Silicon
Author(s) -
Dargys A.,
Žurauskienė N.,
Žurauskas S.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221620115
Subject(s) - ionization , silicon , quantum tunnelling , atomic physics , chemistry , electric field , thermal ionization , phosphorus , transient (computer programming) , thermal , impact ionization , field (mathematics) , electron ionization , physics , condensed matter physics , ion , mathematics , organic chemistry , quantum mechanics , meteorology , computer science , pure mathematics , operating system
Temperature dependent transient tunneling spectra of Si〈P〉 are considered on the basis of two models. The influence of sound vibrations on the field ionization of phosphorus atoms in silicon is analysed numerically and compared with available experimental data. It is found that eletron thermal transitions from ground to orbit‐valley split levels and their subsequent tunneling through the barrier with lower potential gives the main contribution to the ionization rate of phosphorus atoms at high electric fields.