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Electron–Hole Exchange Interaction of Excitons in Direct Band Gap Cubic Semiconductors with Degenerated Valence Band
Author(s) -
Huong Nguyen Que,
Thang Nguyen Toan,
Viet Nguyen Ai
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221610218
Subject(s) - exciton , semiconductor , valence band , exchange interaction , condensed matter physics , direct and indirect band gaps , band gap , valence (chemistry) , electron hole , electronic band structure , electron , physics , atomic physics , quantum mechanics , ferromagnetism
Fine structure of excitons in direct band gap cubic semiconductors is studied. The general formulae for exchange energy of any excitonic states are given. Splitting of energy levels and corresponding wave functions are written for n S and n P exciton states for example.