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Magnetotransport Properties and Subband Structure of the Two‐Dimensional Electron Gas in the Inversion Layer of Hg 1− x Cd x Te Bicrystals
Author(s) -
Kraak W.,
Kaldasch J.,
Gille P.,
Schurig Th.,
Herrmann R.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221610216
Subject(s) - condensed matter physics , electron , degenerate energy levels , fermi gas , electrical resistivity and conductivity , landau quantization , shubnikov–de haas effect , grain boundary , electron density , quantum well , hall effect , conduction band , materials science , chemistry , physics , quantum oscillations , crystallography , quantum mechanics , laser , microstructure
The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p‐type Hg 1− x Cd x Te bicrystals are investigated. The results clearly demonstrate the existence of a two‐dimensional degenerate n‐type inversion layer in the vicinity of the grain boundary. The observed quantum oscillations of the magnetoresistivity result from a superposition of the Shubnikov‐de Haas effect in several occupied electric subbands. The occupation of higher subbands is presumable depending on the total carrier density n s of the inversion layer. Electron densities, subband energies, and effective masses of these electric subbands in samples with different total densities are determined. The effective masses of lower subbands are markedly different from the band edge values of the bulk material, their values decrease with decreasing electron density and converging to the bulk values at lower densities. This agrees with predictions of the triangular potential well model and a pronounced nonparabolicity of the energy bands in Hg 1− x Cd x Te. At high magnetic fields ( B > 10 T) it is experimentally verified that the Hall resistivity ϱ xy is quantized into integer multiplies of h / e 2 .