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Monte Carlo Simulation Analysis of Proton‐Energy Spectra for Axial Channeling in Silicon in the Intermediate Energy Region
Author(s) -
Lenkeit K.,
Trikalinos Ch.,
Balashova L. L.,
Kabachnik N. M.,
Shulga V. I.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221610207
Subject(s) - monte carlo method , atomic physics , electron , physics , spectral line , core electron , anisotropy , semiclassical physics , scattering , proton , silicon , valence electron , computational physics , nuclear physics , quantum mechanics , quantum , statistics , mathematics , optoelectronics
A detailed theoretical analysis of experimental energy spectra of axial‐channeled protons transmitted through thin silicon targets is performed by Monte Carlo calculations. Energy spectra are calculated for 〈110〉, 〈111〉, and 〈112〉 channels in the energy region from 50 to 300 keV. The Monte Carlo program is based on the continuum string model. The energy loss on valence electrons is calculated on the basis of a modified Lindhard model for channeling energy loss and the stopping number is taken from the local density approximation of the Lindhard‐Winther formalism. The anisotropic distribution of the valence electron density in a semiconductor is taken into account. Stopping due to core electrons is considered by a semiclassical approximation. Multiple scattering and energy straggling are included in the simulation program. The calculated energy spectra and channeling stopping powers are in good agreement with experimental ones.