Premium
Optical Properties of GaSe Crystals Containing Mn Impurity Atoms. I. Exciton‐Phonon Interaction
Author(s) -
Gnatenko Yu. P.,
Zhirko Yu. I.,
Kovalyuk Z. D.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221610142
Subject(s) - exciton , phonon , impurity , condensed matter physics , degeneracy (biology) , conduction band , atom (system on chip) , materials science , absorption (acoustics) , thermal conduction , physics , quantum mechanics , bioinformatics , computer science , biology , embedded system , electron , composite material
The experimentally observed growth of the integrated intensity of the n = 1 exciton absorption band in GaSe crystals is due to its energy degeneracy with the indirect conduction band. Participation of a phonon in such a process is needed to meet the conservation laws. Introduction of a light impurity atom into the interlayer space gives rise to a local interlayer mode capable of controlling the exciton‐phonon processes.