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Tin and Iron Impurity Atom States in Modified As 2 Se 3 Films
Author(s) -
Turaev E. Yu.,
Seregin P. P.,
Nasredinov F. S.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221610128
Subject(s) - tin , chalcogenide , impurity , materials science , amorphous solid , sputtering , atom (system on chip) , transition metal , semiconductor , metal , ion , ionization , chemical state , analytical chemistry (journal) , thin film , inorganic chemistry , nanotechnology , x ray photoelectron spectroscopy , chemistry , crystallography , metallurgy , optoelectronics , chemical engineering , catalysis , biochemistry , organic chemistry , chromatography , computer science , embedded system , engineering
Abstract Electrical and optical properties of amorphous As 2 Se 3 films modified by tin (a non‐transition metal) and iron (a transition metal) as well as the state of the modifying impurity atoms are investigated. Tin is found electrically inactive in the modified films like in vitreous As 2 Se 3 . Iron in the modified films is shown to form donor centers with the ionized and neutral states corresponding to the Fe 3+ and Fe 2+ ions, respectively. A conclusion is made that an electrical activity of impurities in the chalcogenide semiconductors modified films results from the chemical nature of modifiers whereas the rf co‐sputtering technique provides their high concentration only.