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Qualitative and Quantitative Differentiation of Paramagnetic Anion‐Antisite‐Related Spectra in GaAs
Author(s) -
Goltzené A.,
Schwab C.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221600226
Subject(s) - laser linewidth , hyperfine structure , ion , extrapolation , spectral line , electron paramagnetic resonance , paramagnetism , photoexcitation , saturation (graph theory) , materials science , chemistry , nuclear magnetic resonance , molecular physics , atomic physics , condensed matter physics , physics , optics , mathematics , mathematical analysis , organic chemistry , astronomy , combinatorics , laser , excited state
The electron paramagnetic resonance spectra related to the anion antisite in GaAs may be sorted out into two groups according to their behaviour under photoexcitation and microwave saturation. This qualitative separation is quantitatively supported by different values for the central hyperfine constant and for the component linewidth of the quadruplet spectrum usually modeled by an isolated As Ga 4+defect. These observations lead to reinvestigate the initial extrapolation, based on the isolated P Ga centre in GaP, which results in the identification of the former quadruplet. It supports the existence of several antisite‐related defects likely differing by their first shell as in GaP.