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Weak Localization and Interaction Effects in Thin Disordered Zinc Films
Author(s) -
Meikap A. K.,
Jana A. R.,
De S. K.,
Chatterjee S.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221600209
Subject(s) - weak localization , condensed matter physics , zinc , scattering , electron , electron scattering , materials science , thin film , magnetoresistance , physics , magnetic field , nanotechnology , optics , quantum mechanics , metallurgy
The low temperature resistance ΔR( T )/R and magnetoconductance Δσ( H, T ) is measured of thin and quasi two‐dimensional disordered zinc films. At low temperatures, the thinnest films show a logarithmic temperature dependence of resistance. This is well explained by the localization and electron–electron interaction theory. The electron–phonon and electron–electron contributions to the resistance are described in detail. From the magnetoconductance data, the inelastic and spin–orbit scattering times are calculated and compared with theoretical values.