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Specific Features of Kinetic Effects Measured in (Cd, Hg) Te in Quantizing Magnetic Fields
Author(s) -
Baranskii P. I.,
Belyaev A. E.,
Gorodnichii O. P.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221600127
Subject(s) - condensed matter physics , hall effect , magnetic field , impurity , electrical resistivity and conductivity , band gap , dielectric , kinetic energy , electron , chemistry , materials science , analytical chemistry (journal) , physics , optoelectronics , quantum mechanics , chromatography , organic chemistry
Magnetic‐field (0 ≦ B ≦ 5 T) and temperature (1.6 ≦ T ≦ 4.2 K) dependences are investigated of resistivity, ϱ, and Hall coefficient, R, in perfect enough and weakly compensated narrow‐gap (NG) and zero‐gap (ZG) n‐(Cd, Hg)Te crystals. A monotonic decline of R ( B ), observed in both the cases, is ascribed to an uncontrollable contribution of size‐quantized surface enrichment layers to the conductivity. The temperature dependence of ϱ⊥ ( B ) in NG samples is related to the freeze‐out of electrons into an impurity donor band. An absence of such a dependence in the ZG samples studied evidences an absence of donor states even at the appearance of a gap. An anomalously strong dependence ϱ⊥ ( B ) ∼ B 5 , measured in this case, is a consequence of a change of dielectric constant, ε, in magnetic field.