Specific Features of Kinetic Effects Measured in (Cd, Hg) Te in Quantizing Magnetic Fields

Magnetic‐field (0 ≦ B ≦ 5 T) and temperature (1.6 ≦ T ≦ 4.2 K) dependences are investigated of resistivity, ϱ, and Hall coefficient, R, in perfect enough and weakly compensated narrow‐gap (NG) and zero‐gap (ZG) n‐(Cd, Hg)Te crystals. A monotonic decline of R ( B ), observed in both the cases, is ascribed to an uncontrollable contribution of size‐quantized surface enrichment layers to the conductivity. The temperature dependence of ϱ⊥ ( B ) in NG samples is related to the freeze‐out of electrons into an impurity donor band. An absence of such a dependence in the ZG samples studied evidences an absence of donor states even at the appearance of a gap. An anomalously strong dependence ϱ⊥ ( B ) ∼ B 5 , measured in this case, is a consequence of a change of dielectric constant, ε, in magnetic field.