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Positron Distribution in Semiconductors
Author(s) -
Aourag H.,
Khelifa B.,
Belaidi A.,
Belarbi Z.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221600118
Subject(s) - positron , semiconductor , atom (system on chip) , electron , ion , compound semiconductor , electron affinity (data page) , atomic physics , materials science , physics , nuclear physics , nanotechnology , molecule , optoelectronics , layer (electronics) , quantum mechanics , computer science , epitaxy , embedded system
The positron distribution of charge along the (111) direction is calculated for elemental and compound semiconductors. The results show that the positron has a strong affinity for one sort of atom in binary semiconductors. This relative positron affinity may lead to the positron preferentially annihilating with the electrons of that sort of atom in compound semiconductors. The trends in going from Ge to CdTe through GaAs show an increase in positron affinity for the anion over the cation.