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Confined‐LO‐Phonon‐Limited Mobility in a Semiconductor Quantum Well
Author(s) -
Leon H.,
Comas F.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221600107
Subject(s) - hamiltonian (control theory) , degenerate energy levels , phonon , condensed matter physics , electron mobility , semiconductor , scattering , physics , phonon scattering , quantum , electron , degenerate semiconductor , quantum mechanics , limit (mathematics) , quantum limit , quantum well , mathematics , mathematical analysis , mathematical optimization , laser
Low‐field drift mobility for transport parallel to the interfaces in a semiconductor quantum well is calculated by means of an iterative procedure. Electron–confined‐LO‐phonon‐interaction Hamiltonian is taken from a previous work. Calculations are accomplished in the size‐quantum‐limit approximation (when just the first subband is considered) for a degenerate electron gas. Screening effect is neglected. Comparison with earlier works on the subject is made, and the conclusion is drawn that the effect of LO‐phonon confinement comes out in a increasing of mobility values when only this scattering mechanism is taken into account.